CSD13306W Series

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs(th) (Max)	Package / Case	FET Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package Name	Package Width	Package Length	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Vgs (Max)
Texas Instruments CSD13306W	2.5 V	4.5 V	MOSFET (Metal Oxide)	12 V	11.2 nC	1.3 V	6-UFBGA DSBGA	N-Channel	10.2 mOhm	-55 °C	150 °C	Surface Mount	6-DSBGA	1.5 mm	1 mm	1370 pF	1.9 W	3.5 A	10 V

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm

Description

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile. This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.