
CSD75208W1015 Series
Manufacturer: Texas Instruments
-20-V, P CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE WLP 1 MM X 1.5 MM, 108 MOHM, GATE ESD PROT
| Part | Power - Max | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Package Name | Package Width | Package Length | Mounting Type | FET Feature | Vgs(th) (Max) | Package / Case | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) | Rds On (Max) | Configuration - Features | Configuration | Channel Count | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | 750 mW | 2.5 nC | 410 pF | 6-DSBGA | 1.5 mm | 1 mm | Surface Mount | Logic Level Gate | 1.1 V | 6-UFBGA DSBGA | MOSFET (Metal Oxide) | -55 °C | 150 °C | 1.6 A | 68 mOhm | Dual | Common Source P-Channel | 2 | 20 V |
Texas Instruments | 750 mW | 2.5 nC | 410 pF | 6-DSBGA | 1.5 mm | 1 mm | Surface Mount | Logic Level Gate | 1.1 V | 6-UFBGA DSBGA | MOSFET (Metal Oxide) | -55 °C | 150 °C | 1.6 A | 68 mOhm | Dual | Common Source P-Channel | 2 | 20 V |