CSD16406Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 7.4 mOhm

Link to Manufacturer Page: https://www.ti.com/

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 7.4 mOhm

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Power Dissipation (Max) [Max]
Texas Instruments CSD16406Q3	19 A, 60 A	1100 pF	N-Channel	4.5 V, 10 V	Surface Mount	MOSFET (Metal Oxide)	8.1 nC	150 °C	-55 °C	2.2 V	16 V	-12 V	5.3 mOhm	25 V	8-PowerTDFN	8-VSON-CLIP (3.3x3.3)	2.7 W

Key Features

• Ultra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3 mm × 3.3 mm Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3 mm × 3.3 mm Plastic Package

Description

This 25 V, 4.2 mΩ, 3.3 mm × 3.3 mm SON NexFET power MOSFET has been designed to minimize losses in power conversion applications. This 25 V, 4.2 mΩ, 3.3 mm × 3.3 mm SON NexFET power MOSFET has been designed to minimize losses in power conversion applications.