CSD25213 Series

-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection

Part	Technology	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Rds On (Max)	Package Width	Package Name	Package Length	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)
Texas Instruments CSD25213W10	MOSFET (Metal Oxide)	1.6 A	2.9 nC	20 V	4-UFBGA DSBGA	1 W	47 mOhm	1 mm	4-DSBGA	1 mm	P-Channel	2.5 V	4.5 V	-6 V	-55 °C	150 °C	Surface Mount	478 pF	1.1 V

Catalog

-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.