CSD19532KTT Series

100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm

Part	Package Name	Package / Case	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Technology	Gate Charge (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	FET Type	Rds On (Max)
Texas Instruments CSD19532KTT	TO-263 (DDPAK-3)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	Surface Mount	200 A	6 V	10 V	MOSFET (Metal Oxide)	57 nC 57 nC	250 W	-55 °C	175 °C	100 V	3.2 V	N-Channel	5.6 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm

Description

This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.