30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) | Package Name | Package Width | Package Length | Technology | Rds On (Max) | Power Dissipation (Max) | FET Type | Package / Case | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Vgs (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Texas Instruments | -55 °C | 150 °C | 30 nC | 60 A | 8-VSON-CLIP | 3.3 mm | 3.3 mm | MOSFET (Metal Oxide) | 2.3 mOhm | 2.8 W 108 W | N-Channel | 8-PowerTDFN | 4420 pF | 1.8 V | 20 V | 30 V | Surface Mount | 10 V | 4.5 V |
 Texas Instruments | -55 °C | 150 °C | 30 nC | 60 A | 8-VSON-CLIP | 3.3 mm | 3.3 mm | MOSFET (Metal Oxide) | 2.3 mOhm | 2.8 W 108 W | N-Channel | 8-PowerTDFN | 4420 pF | 1.8 V | 20 V | 30 V | Surface Mount | 10 V | 4.5 V |