Beta
⌘K
MOSFET N-CH 100V 16.7A TO263
| Part | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Technology | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 100 V | 13.8 mOhm | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -55 °C | 175 ░C | N-Channel | 60 nC | 3.75 W 88.2 W | TO-263 (D2PAK) | 16.7 A | 6 V 10 V | 20 V | 4 V | 2110 pF | Surface Mount |