SUM25P10-138-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 16.7A TO263

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 16.7A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM25P10-138-E3

Current - Continuous Drain (Id) @ 25°C	16.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.75 W, 88.2 W
Rds On (Max) @ Id, Vgs [Max]	13.8 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Vishay General Semiconductor - Diodes Division SUM25P10-138-E3	100 V	13.8 mOhm	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	N-Channel	60 nC	3.75 W 88.2 W	TO-263 (D2PAK)	16.7 A	6 V 10 V	20 V	4 V	2110 pF	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 16.7A (Tc) 3.75W (Ta), 88.2W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources