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TPS43061 Series

Low Iq, Synchronous Boost Controller with Wide Input Voltage and 5.5V Gate Drive for Low Qg NexFETs

Manufacturer: Texas Instruments

Catalog(3 parts)

PartOperating TemperatureOperating TemperatureFrequency - SwitchingFrequency - SwitchingTopologyOutput PhasesOutput ConfigurationVoltage - Supply (Vcc/Vdd)Voltage - Supply (Vcc/Vdd)Control FeaturesSupplier Device PackagePackage / CaseSynchronous RectifierClock SyncMounting TypeOutput TypeFunctionNumber of OutputsVoltage - OutputCurrent - OutputOutputs and TypeOutputs and TypeFrequency - SwitchingVoltage - InputVoltage - InputRegulator TopologyMain PurposeUtilized IC / PartSupplied ContentsBoard Type
Texas Instruments
TPS43061RTET
Boost Regulator Positive Output Step-Up DC-DC Controller IC 16-WQFN (3x3)
150 °C
-40 °C
50000 Hz
1000000 Hz
Boost
1 ul
Positive
38 V
4.5 V
Enable, Frequency Control, Power Good, Soft Start
16-WQFN (3x3)
16-WFQFN Exposed Pad
Surface Mount
Transistor Driver
Step-Up
1 ul
Texas Instruments
TPS43061EVM-198
TPS43061 - DC/DC, Step Up 1, Non-Isolated Outputs Evaluation Board
15 V
2 A
Non-Isolated
1 ul
750000 Hz
12.600000381469728 V
6 V
Boost
DC/DC, Step Up
TPS43061
Board(s)
Fully Populated
Texas Instruments
TPS43061RTER
Boost Regulator Positive Output Step-Up DC-DC Controller IC 16-WQFN (3x3)
150 °C
-40 °C
50000 Hz
1000000 Hz
Boost
1 ul
Positive
38 V
4.5 V
Enable, Frequency Control, Power Good, Soft Start
16-WQFN (3x3)
16-WFQFN Exposed Pad
Surface Mount
Transistor Driver
Step-Up
1 ul

Key Features

58-V Maximum Output Voltage4.5 to 38 V (40 V Absolute Max)VINRangeTPS43060: 7.5-V Gate Drive Optimizedfor Standard Threshold MOSFETsTPS43061: 5.5-V Gate Drive Optimizedfor Low QgNexFET™ Power MOSFETsCurrent-Mode Control With InternalSlope CompensationAdjustable Frequency from 50 kHz to1 MHzSynchronization Capability to ExternalClockAdjustable Soft-Start TimeInductor DCR or Resistor Current SensingOutput Voltage Power-Good Indicator±0.8% Feedback Reference Voltage5-µA Shutdown Supply Current600-µA Operating Quiescent CurrentIntegrated Bootstrap Diode (TPS43061)Cycle-by-Cycle Current Limit and ThermalShutdownAdjustable Undervoltage Lockout (UVLO)and Output Overvoltage ProtectionSmall 16-Pin WQFN (3 mm × 3 mm)Package With PowerPAD™–40°C to 150°C OperatingTJRange58-V Maximum Output Voltage4.5 to 38 V (40 V Absolute Max)VINRangeTPS43060: 7.5-V Gate Drive Optimizedfor Standard Threshold MOSFETsTPS43061: 5.5-V Gate Drive Optimizedfor Low QgNexFET™ Power MOSFETsCurrent-Mode Control With InternalSlope CompensationAdjustable Frequency from 50 kHz to1 MHzSynchronization Capability to ExternalClockAdjustable Soft-Start TimeInductor DCR or Resistor Current SensingOutput Voltage Power-Good Indicator±0.8% Feedback Reference Voltage5-µA Shutdown Supply Current600-µA Operating Quiescent CurrentIntegrated Bootstrap Diode (TPS43061)Cycle-by-Cycle Current Limit and ThermalShutdownAdjustable Undervoltage Lockout (UVLO)and Output Overvoltage ProtectionSmall 16-Pin WQFN (3 mm × 3 mm)Package With PowerPAD™–40°C to 150°C OperatingTJRange

Description

AI
The TPS43060 and TPS43061 are low IQcurrent-mode synchronous boost controllers with wide-input voltage range from 4.5 to 38 V (40 V absolute max) and boosted output range up to 58 V. Synchronous rectification enables high-efficiency for high-current applications, and lossless inductor DCR sensing further improves efficiency. The resulting low-power losses combined with a 3-mm × 3-mm WQFN-16 package with PowerPAD™ supports high power-density and high-reliability boost converter solutions over extended (–40°C to 150°C) temperature range. The TPS43060 includes a 7.5-V gate drive supply, which is suitable to drive a broad range of MOSFETs. The TPS43061 has a 5.5-V gate drive supply and driver strength optimized for low QgNexFET power MOSFETs. Also, TPS43061 provides an integrated bootstrap diode for the high-side gate driver to reduce the external parts count. The TPS43060 and TPS43061 are low IQcurrent-mode synchronous boost controllers with wide-input voltage range from 4.5 to 38 V (40 V absolute max) and boosted output range up to 58 V. Synchronous rectification enables high-efficiency for high-current applications, and lossless inductor DCR sensing further improves efficiency. The resulting low-power losses combined with a 3-mm × 3-mm WQFN-16 package with PowerPAD™ supports high power-density and high-reliability boost converter solutions over extended (–40°C to 150°C) temperature range. The TPS43060 includes a 7.5-V gate drive supply, which is suitable to drive a broad range of MOSFETs. The TPS43061 has a 5.5-V gate drive supply and driver strength optimized for low QgNexFET power MOSFETs. Also, TPS43061 provides an integrated bootstrap diode for the high-side gate driver to reduce the external parts count.