30 V, dual N-channel Trench MOSFET
30 V, dual N-channel Trench MOSFET
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Mounting Type | Power - Max (Ta) | Input Capacitance (Ciss) (Max) | Qualification | Grade | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Ta) | Vgs(th) (Max) | Technology | Rds On (Max) | Channel Count | Configuration | Configuration - Features | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | -55 °C | 150 °C | 6-UDFN Exposed Pad | Surface Mount | 485 mW | 256 pF | AEC-Q100 | Automotive | 5 nC | 30 V | 3.1 A | 1.25 V | MOSFET (Metal Oxide) | 72 mOhm | 2 | N-Channel | Dual | DFN2020D-6 |