CSD18509 Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.2 mOhm

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.2 mOhm

Part	Vgs (Max)	Vgs(th) (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Technology	Package Name	Package Width	Package Length	Gate Charge (Max)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type
Texas Instruments CSD18509Q5BT	20 V	2.2 V	Surface Mount	13900 pF	1.2 mOhm	100 A	MOSFET (Metal Oxide)	8-VSON-CLIP	6 mm	5 mm	195 nC	3.1 W 195 W	8-PowerTDFN	40 V	10 V	4.5 V	-55 °C	150 °C	N-Channel

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.2 mOhm

Description

This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.