IC NVSRAM 64KBIT PARALLEL 28SOIC
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Size | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Memory Type | Memory Interface | Supplier Device Package | Memory Format | Package / Case [custom] | Package / Case | Package / Case [custom] | Access Time | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Memory Organization | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case | Write Cycle Time - Word, Page | Supplier Device Package [x] | Supplier Device Package [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4.5 V | 5.5 V | 64 Kbit | 45 ns | 45 ns | Non-Volatile | Parallel | 28-SOIC | NVSRAM | 8.69 mm | 28-SOIC | 0.342 in | 45 ns | NVSRAM (Non-Volatile SRAM) | 70 °C | 0 °C | Surface Mount | 8 K | |||||||
Infineon Technologies | 4.5 V | 5.5 V | 64 Kbit | 55 ns | 55 ns | Non-Volatile | Parallel | 28-CDIP | NVSRAM | 28-CDIP | 55 ns | NVSRAM (Non-Volatile SRAM) | Through Hole | 8 K | 125 °C | -55 °C | 7.62 mm | 0.3 in | |||||||
Infineon Technologies | 4.5 V | 5.5 V | 64 Kbit | Non-Volatile | Parallel | 28-CDIP | NVSRAM | 28-CDIP | 35 ns | NVSRAM (Non-Volatile SRAM) | Through Hole | 8 K | 125 °C | -55 °C | 7.62 mm | 0.3 in | 35 ns | ||||||||
Infineon Technologies | 4.5 V | 5.5 V | 64 Kbit | 45 ns | 45 ns | Non-Volatile | Parallel | 28-SOIC | NVSRAM | 8.69 mm | 28-SOIC | 0.342 in | 45 ns | NVSRAM (Non-Volatile SRAM) | 70 °C | 0 °C | Surface Mount | 8 K | |||||||
Infineon Technologies | 4.5 V | 5.5 V | 64 Kbit | Non-Volatile | Parallel | 28-LCC | NVSRAM | 28-LCC | 35 ns | NVSRAM (Non-Volatile SRAM) | Surface Mount | 8 K | 125 °C | -55 °C | 35 ns | 13.97 | 8.89 | ||||||||
Infineon Technologies | 4.5 V | 5.5 V | 64 Kbit | Non-Volatile | Parallel | 28-CDIP | NVSRAM | 28-CDIP | 35 ns | NVSRAM (Non-Volatile SRAM) | 85 °C | -40 °C | Through Hole | 8 K | 7.62 mm | 0.3 in | 35 ns | ||||||||
Infineon Technologies | 4.5 V | 5.5 V | 64 Kbit | Non-Volatile | Parallel | 28-CDIP | NVSRAM | 28-CDIP | 35 ns | NVSRAM (Non-Volatile SRAM) | 85 °C | -40 °C | Through Hole | 8 K | 7.62 mm | 0.3 in | 35 ns | ||||||||
Infineon Technologies | 4.5 V | 5.5 V | 64 Kbit | 45 ns | 45 ns | Non-Volatile | Parallel | 28-CDIP | NVSRAM | 28-CDIP | 45 ns | NVSRAM (Non-Volatile SRAM) | 85 °C | -40 °C | Through Hole | 8 K | 7.62 mm | 0.3 in | |||||||
Infineon Technologies | 4.5 V | 5.5 V | 64 Kbit | Non-Volatile | Parallel | 28-SOIC | NVSRAM | 8.69 mm | 28-SOIC | 0.342 in | 35 ns | NVSRAM (Non-Volatile SRAM) | 70 °C | 0 °C | Surface Mount | 8 K | 35 ns |