DGD2136 Series

Inactive Datasheet Archive

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Inactive Datasheet Archive

Part	Supplier Device Package	Mounting Type	Gate Type	Input Type	Driven Configuration	Channel Type	Package / Case	Package / Case [x]	Package / Case [y]	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature
Diodes Inc DGD2136MS28-13	28-SO	Surface Mount	IGBT N-Channel MOSFET	Inverting	Half-Bridge	3-Phase	28-SOIC	0.295 in	7.5 mm	6	35 ns	90 ns	600 V	20 V	10 VDC	150 °C

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Key Features

• Three floating high-side drivers in bootstrap operation to 600V

• 200mA source / 350mA sink output current capability

• Outputs tolerant to negative transients, dV/dt immune

• Logic input 3.3V capability

• Internal deadtime of 290ns to protect MOSFETs

• Matched prop delay for all channels

• Outputs out of phase with inputs

• Schmitt triggered logic inputs

• Cross conduction prevention logic

• Undervoltage lockout for all channels

• Overcurrent protection shuts down drivers

• Extended temperature range: -40°C to +125°C

Description

The DGD2136 is a three-phase gate driver IC designed for high-voltage / high-speed applications, driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the DGD2136’s high-side to switch to 600V in a bootstrap operation.