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DGD2136MS28-13 - DGD2136S28-13

DGD2136MS28-13

Active
Diodes Inc

IC GATE DRVR HALF-BRIDGE 28SO

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DGD2136MS28-13 - DGD2136S28-13

DGD2136MS28-13

Active
Diodes Inc

IC GATE DRVR HALF-BRIDGE 28SO

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDGD2136MS28-13
Channel Type3-Phase
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]600 V
Input TypeInverting
Mounting TypeSurface Mount
Number of Drivers6
Operating Temperature150 °C
Package / Case28-SOIC
Package / Case [x]0.295 in
Package / Case [y]7.5 mm
Rise / Fall Time (Typ) [custom]35 ns
Rise / Fall Time (Typ) [custom]90 ns
Supplier Device Package28-SO
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.46
10$ 2.26
25$ 1.95
100$ 1.60
250$ 1.43
500$ 1.32
Digi-Reel® 1$ 3.46
10$ 2.26
25$ 1.95
100$ 1.60
250$ 1.43
500$ 1.32
Tape & Reel (TR) 1500$ 1.05

Description

General part information

DGD2136 Series

The DGD2136 is a three-phase gate driver IC designed for high-voltage / high-speed applications, driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the DGD2136’s high-side to switch to 600V in a bootstrap operation.