
CSD17310Q5A Series
Manufacturer: Texas Instruments
30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 5.9 MOHM
| Part | Technology | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) | Mounting Type | Gate Charge (Max) | Vgs(th) (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Vgs (Max) Negative | Vgs (Max) Positive | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Input Capacitance (Ciss) (Max) | Package Width | Package Name | Package Length | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | MOSFET (Metal Oxide) | 3.1 W | 30 V | 5.1 mOhm | Surface Mount | 11.6 nC | 1.8 V | 3 V | 8 V | -8 V | 10 V | 21 A | 100 A | -55 °C | 150 °C | N-Channel | 1560 pF | 6 mm | 8-VSONP | 5 mm | 8-PowerTDFN |