UCC21220 Series
3.0kVrms, 4A/6A dual-channel isolated gate driver with disable pin & 8V UVLO for MOSFETs & GaNFETs
Manufacturer: Texas Instruments
Catalog(3 parts)
| Part | Pulse Width Distortion (Max)▲▼ | Technology | Current - Output High, Low▲▼ | Current - Output High, Low▲▼ | Propagation Delay tpLH / tpHL (Max)▲▼ | Voltage - Isolation▲▼ | Rise / Fall Time (Typ)▲▼ | Package / Case | Package / Case▲▼ | Supplier Device Package | Mounting Type | Common Mode Transient Immunity (Min)▲▼ | Voltage - Output Supply▲▼ | Voltage - Output Supply▲▼ | Number of Channels▲▼ | Operating Temperature▲▼ | Operating Temperature▲▼ | Approval Agency | Current - Peak Output▲▼ | Contents | Function | Utilized IC / Part | Supplied Contents | Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
5.5000000109828315e-9 s | Capacitive Coupling | 6 A | 4 A | 3.999999975690116e-8 s | 3000 Vrms | 4.999999969612645e-9 s, 6.000000052353016e-9 s | 16-SOIC | 0.003911599982529879 m, 3.900000095367432 ul | 16-SOIC | Surface Mount | 99999997952 V/s | 18 V | 9.199999809265137 V | 2 ul | 125 °C | -40 °C | ||||||||
5.5000000109828315e-9 s | Capacitive Coupling | 3.999999975690116e-8 s | 3000 Vrms | 4.999999969612645e-9 s, 6.000000052353016e-9 s | 16-SOIC | 0.003911599982529879 m, 3.900000095367432 ul | 16-SOIC | Surface Mount | 99999997952 V/s | 18 V | 6 V | 2 ul | 125 °C | -40 °C | CQC, UL, VDE | 4 A, 6 A | ||||||||
Board(s) | Gate Driver | UCC21220 | Board(s) | Power Management |
Key Features
• Universal: dual low-side, dual high-side or half-bridge driverSupports basic and functional isolationCMTI greater than 125V/nsUp to 4A peak source, 6A peak sink outputSwitching parameters:33ns typical propagation delay5ns maximum pulse-width distortion10µs maximum VDD power-up delayUp to 25V VDD output drive supply5V and 8V VDD UVLO OptionsJunction temperature range (Tj) –40°C to 150°CNarrow body SOIC-16 (D) packageTTL and CMOS compatible inputsSafety-related certifications:4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17) (planned)3000VRMS isolation for 1 minute per UL 1577 (planned)CQC certification per GB4943.1-2022 (planned)Universal: dual low-side, dual high-side or half-bridge driverSupports basic and functional isolationCMTI greater than 125V/nsUp to 4A peak source, 6A peak sink outputSwitching parameters:33ns typical propagation delay5ns maximum pulse-width distortion10µs maximum VDD power-up delayUp to 25V VDD output drive supply5V and 8V VDD UVLO OptionsJunction temperature range (Tj) –40°C to 150°CNarrow body SOIC-16 (D) packageTTL and CMOS compatible inputsSafety-related certifications:4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17) (planned)3000VRMS isolation for 1 minute per UL 1577 (planned)CQC certification per GB4943.1-2022 (planned)
Description
AI
The UCC21220 and UCC21220A devices are basic and functional isolated dual-channel gate drivers with 4A peak-source and 6A peak-sink current. They are designed to drive power MOSFETs and GaNFETs in PFC, Isolated DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 125V/ns common-mode transient immunity (CMTI).
These devices can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions due to the best-in-class delay matching performance.
Protection features include the following: DIS pin shuts down both outputs simultaneously when it is set high, all supplies have undervoltage lockout (UVLO), and active pulldown protection clamps the output below 2V when unpowered or floated.
With these features, these devices enable high efficiency, high power density, and robustness in a wide variety of power applications.
The UCC21220 and UCC21220A devices are basic and functional isolated dual-channel gate drivers with 4A peak-source and 6A peak-sink current. They are designed to drive power MOSFETs and GaNFETs in PFC, Isolated DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 125V/ns common-mode transient immunity (CMTI).
These devices can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions due to the best-in-class delay matching performance.
Protection features include the following: DIS pin shuts down both outputs simultaneously when it is set high, all supplies have undervoltage lockout (UVLO), and active pulldown protection clamps the output below 2V when unpowered or floated.
With these features, these devices enable high efficiency, high power density, and robustness in a wide variety of power applications.