74CBT3384 Series
3.3-V, 1:1 (SPST), 10-channel general-purpose FET bus switch with –2-V undershoot protection
Manufacturer: Texas Instruments
Catalog(11 parts)
Part | Package / Case▲▼ | Package / Case▲▼ | Package / Case | Voltage - Supply▲▼ | Voltage - Supply▲▼ | Supplier Device Package | Mounting Type | Operating Temperature▲▼ | Operating Temperature▲▼ | Type | Circuit | Circuit▲▼ | Voltage Supply Source | Independent Circuits▲▼ | Package / Case▲▼ | Package / Case▲▼ | Package / Case▲▼ | Package / Case▲▼ | Package / Case▲▼ | Package / Case▲▼ |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0.007499999832361937 m | 0.007493000011891127 m | 24-SOIC | 5.5 V | 4.5 V | 24-SOIC | Surface Mount | -40 °C | 85 °C | Bus Switch | 1:1 | 5 ul | Single Supply | 2 ul | |||||||
0.007499999832361937 m | 0.007493000011891127 m | 24-SOIC | 5.5 V | 4.5 V | 24-SOIC | Surface Mount | -40 °C | 85 °C | Bus Switch | 1:1 | 5 ul | Single Supply | 2 ul | |||||||
24-SSOP | 5.5 V | 4.5 V | 24-SSOP | Surface Mount | -40 °C | 85 °C | Bus Switch | 1:1 | 5 ul | Single Supply | 2 ul | 0.005308600142598152 m | 0.0052999998442828655 m | |||||||
Texas Instruments SN74CBT3384DWR | ||||||||||||||||||||
24-TSSOP | 5.5 V | 4.5 V | 24-TSSOP | Surface Mount | -40 °C | 85 °C | Bus Switch | 1:1 | 5 ul | Single Supply | 2 ul | 0.004399999976158142 m | 0.004394200164824724 m | |||||||
Texas Instruments SN74CBT3384DW | ||||||||||||||||||||
24-SSOP | 5.5 V | 4.5 V | 24-SSOP | Surface Mount | -40 °C | 85 °C | Bus Switch | 1:1 | 5 ul | Single Supply | 2 ul | |||||||||
24-TFSOP (0.173", 4.40mm Width) | 5.5 V | 4.5 V | 24-TVSOP | Surface Mount | -40 °C | 85 °C | Bus Switch | 1:1 | 5 ul | Single Supply | 2 ul | 0.004394200164824724 m | 0.004399999976158142 m | |||||||
24-TFSOP (0.173", 4.40mm Width) | 5.5 V | 4.5 V | 24-TVSOP | Surface Mount | -40 °C | 85 °C | Bus Switch | 1:1 | 5 ul | Single Supply | 2 ul | 0.004394200164824724 m | 0.004399999976158142 m | |||||||
24-TSSOP | 5.5 V | 4.5 V | 24-TSSOP | Surface Mount | -40 °C | 85 °C | Bus Switch | 1:1 | 5 ul | Single Supply | 2 ul | 0.004399999976158142 m | 0.004394200164824724 m | |||||||
0.007499999832361937 m | 0.007493000011891127 m | 24-SOIC | 5.5 V | 4.5 V | 24-SOIC | Surface Mount | -40 °C | 85 °C | Bus Switch | 1:1 | 5 ul | Single Supply | 2 ul |
Key Features
• Undershoot Protection for Off-Isolation on A and B Ports Up to –2 VBidirectional Data Flow, With Near-Zero Propagation DelayLow ON-State Resistance (ron) Characteristics (ron= 3Typical)Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF)= 5 pF Typical)Data and Control Inputs Provide Undershoot Clamp DiodesLow Power Consumption (ICC= 3 µA Max)VCCOperating Range From 4 V to 5.5 VData I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS OutputsIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports Both Digital and Analog Applications: PCI Interface, USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal GatingUndershoot Protection for Off-Isolation on A and B Ports Up to –2 VBidirectional Data Flow, With Near-Zero Propagation DelayLow ON-State Resistance (ron) Characteristics (ron= 3Typical)Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF)= 5 pF Typical)Data and Control Inputs Provide Undershoot Clamp DiodesLow Power Consumption (ICC= 3 µA Max)VCCOperating Range From 4 V to 5.5 VData I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS OutputsIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports Both Digital and Analog Applications: PCI Interface, USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
Description
AI
The SN74CBT3384C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3384C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.
The SN74CBT3384C is organized as two 5-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 5-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN74CBT3384C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3384C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.
The SN74CBT3384C is organized as two 5-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 5-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.