25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 12.4 mOhm
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 12.4 mOhm
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 12.4 mOhm
| Part | Vgs(th) (Max) | Technology | Vgs (Max) Negative | Vgs (Max) Positive | FET Type | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Input Capacitance (Ciss) (Max) | Mounting Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Drain to Source Voltage (Vdss) | Package Width | Package Name | Package Length | Power Dissipation (Max) | Gate Charge (Max) | Rds On (Max) | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | 2.3 V | MOSFET (Metal Oxide) | -12 V | 16 V | N-Channel | 15 A | 60 A | 800 pF | Surface Mount | 10 V | 4.5 V | 8-PowerTDFN | 25 V | 6 mm | 8-VSONP | 5 mm | 2.6 W | 5.6 nC | 8.2 mOhm | -55 °C | 150 °C |