SN74CBT3383C Series

5-V, crosspoint/exchange, 10-channel FET bus switch with –2-V undershoot protection

Catalog

5-V, crosspoint/exchange, 10-channel FET bus switch with –2-V undershoot protection

Part	Supplier Device Package	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Voltage Supply Source	Type	Package / Case [custom]	Package / Case	Package / Case [custom]	Independent Circuits	Operating Temperature [Max]	Operating Temperature [Min]	Circuit [x]	Circuit [custom]	Package / Case [y]	Package / Case [y]	Package / Case
Texas Instruments SN74CBT3383DWR	24-SOIC	Surface Mount	4.5 V	5.5 V	Single Supply	Bus FET Exchange Switch	7.5 mm	24-SOIC	0.295 in	1	85 °C	-40 °C	5	2:2
Texas Instruments SN74CBT3383DGVR	24-TVSOP	Surface Mount	4.5 V	5.5 V	Single Supply	Bus FET Exchange Switch		24-TFSOP		1	85 °C	-40 °C	5	2:2	4.4 mm	0.173 in
Texas Instruments SN74CBT3383PWRG4	24-TSSOP	Surface Mount	4.5 V	5.5 V	Single Supply	Bus FET Exchange Switch		24-TSSOP		1	85 °C	-40 °C	5	2:2			0.173 in 4.4 mm
Texas Instruments SN74CBT3383CPW	24-TSSOP	Surface Mount	4.5 V	5.5 V	Single Supply	Bus FET Exchange Switch		24-TSSOP		1	85 °C	-40 °C	5	2:2			0.173 in 4.4 mm
Texas Instruments SN74CBT3383DBR	24-SSOP	Surface Mount	4.5 V	5.5 V	Single Supply	Bus FET Exchange Switch		24-SSOP		1	85 °C	-40 °C	5	2:2
Texas Instruments SN74CBT3383CDW	24-SOIC	Surface Mount	4.5 V	5.5 V	Single Supply	Bus FET Exchange Switch	7.5 mm	24-SOIC	0.295 in	1	85 °C	-40 °C	5	2:2
Texas Instruments SN74CBT3383CDBR	24-SSOP	Surface Mount	4.5 V	5.5 V	Single Supply	Bus FET Exchange Switch		24-SSOP		1	85 °C	-40 °C	5	2:2
Texas Instruments SN74CBT3383CDBRE4	24-SSOP	Surface Mount	4.5 V	5.5 V	Single Supply	Bus FET Exchange Switch		24-SSOP		1	85 °C	-40 °C	5	2:2
Texas Instruments SN74CBT3383CDBQR	24-SSOP	Surface Mount	4.5 V	5.5 V	Single Supply	Bus FET Exchange Switch	0.154 " 3.9 mm	24-SSOP		1	85 °C	-40 °C	5	2:2
Texas Instruments SN74CBT3383CPWR	24-TSSOP	Surface Mount	4.5 V	5.5 V	Single Supply	Bus FET Exchange Switch		24-TSSOP		1	85 °C	-40 °C	5	2:2			0.173 in 4.4 mm

Catalog

5-V, crosspoint/exchange, 10-channel FET bus switch with –2-V undershoot protection

Key Features

• Undershoot protection for off-isolation on A and B ports up to −2 VBidirectional data flow, with near-zero propagation delayLow on-state resistance (ron) characteristics (ron= 3 Ω typical)Low input output capacitance minimizes loading and signal distortion (Cio (OFF) = 8 pF typical)Data and control inputs provide undershoot clamp diodesLow power consumption (ICC = 3 µA maximum)VCCoperating range from 4 V to 5.5 V data I/Os support 0 to 5-V signaling levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V)Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputsIoff supports partial-power-down mode operationLatch-up performance exceeds 100 mA per JESD 78, Class IIESD performance tested per JESD 22− 2000-V Human-Body Model (A114-B, Class II)− 1000-V Charged-Device Model (C101)Supports both digital and analog applications: PCI interface, memory interleaving, bus isolation, low-distortion signal gatingUndershoot protection for off-isolation on A and B ports up to −2 VBidirectional data flow, with near-zero propagation delayLow on-state resistance (ron) characteristics (ron= 3 Ω typical)Low input output capacitance minimizes loading and signal distortion (Cio (OFF) = 8 pF typical)Data and control inputs provide undershoot clamp diodesLow power consumption (ICC = 3 µA maximum)VCCoperating range from 4 V to 5.5 V data I/Os support 0 to 5-V signaling levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V)Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputsIoff supports partial-power-down mode operationLatch-up performance exceeds 100 mA per JESD 78, Class IIESD performance tested per JESD 22− 2000-V Human-Body Model (A114-B, Class II)− 1000-V Charged-Device Model (C101)Supports both digital and analog applications: PCI interface, memory interleaving, bus isolation, low-distortion signal gating

Description

The SN74CBT3383C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3383C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBT3383C is organized as a 10-bit bus switch, or as a 5-bit bus-exchange switch with a single output-enable (BE) input that provides data exchanging between four signal ports. The select (BX) input controls the data path of the bus-exchange switch. WhenBEis low, the A port is connected to the B port, allowing bidirectional data flow between ports. WhenBEis high, a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,BEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CBT3383C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3383C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBT3383C is organized as a 10-bit bus switch, or as a 5-bit bus-exchange switch with a single output-enable (BE) input that provides data exchanging between four signal ports. The select (BX) input controls the data path of the bus-exchange switch. WhenBEis low, the A port is connected to the B port, allowing bidirectional data flow between ports. WhenBEis high, a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,BEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.