20 V, dual P-channel Trench MOSFET
20 V, dual P-channel Trench MOSFET
| Part | Technology | Power - Max (Tc) | Power - Max (Ta) | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | Mounting Type | Package / Case | Package Name | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Channel Count | Configuration | Configuration - Features | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 6 W | 280 mW | -55 °C | 150 °C | 770 mOhm | Surface Mount | 6-XFDFN Exposed Pad | DFN1010B-6 | 0.8 nC | 570 mA | 2.3 A | 53.5 pF | 1 V | 2 | P-Channel | Dual | 20 V |