POWER MOSFET, N CHANNEL, 40 V, 209 A, 0.00125 OHM, DIRECTFET ME, SURFACE MOUNT
| Part | Supplier Device Package | Power Dissipation (Max) | Vgs (Max) | Technology | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | DirectFET™ Isometric ME | 104 W | 20 V | MOSFET (Metal Oxide) | 1.25 mOhm | 6904 pF | Surface Mount | 4.5 V 10 V | 40 V | -55 °C | 150 °C | 2.5 V | 4.5 V 111 nC | DirectFET™ Isometric ME | N-Channel | 209 A |
Infineon Technologies | DirectFET™ Isometric ME | 104 W | 20 V | MOSFET (Metal Oxide) | 1.25 mOhm | 6904 pF | Surface Mount | 4.5 V 10 V | 40 V | -55 °C | 150 °C | 2.5 V | 4.5 V 111 nC | DirectFET™ Isometric ME | N-Channel | 209 A |