Beta
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IR MOSFET™ N-CHANNEL POWER MOSFET ; PQFN 2 X 2 PACKAGE; 15.5 MOHM;
| Part | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 15.5 mOhm | 30 V | 6-PowerVDFN | -55 °C | 150 °C | Surface Mount | 12 V | 2.5 V 4.5 V | N-Channel | 1019 pF | 11 nC | 6-PQFN (2x2) | MOSFET (Metal Oxide) | 8.7 A | 19 A | 1.1 V | 2.1 W |