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74CB3Q3245 Series

3.3-V, 1:1 (SPST), 8-channel FET bus switch

Manufacturer: Texas Instruments

Catalog(7 parts)

PartIndependent CircuitsVoltage Supply SourcePackage / CaseSupplier Device PackageOperating TemperatureOperating TemperatureTypeVoltage - SupplyVoltage - SupplyCircuitCircuitMounting TypePackage / CasePackage / CasePackage / Case
Texas Instruments
74CB3Q3245RGYRG4
Bus Switch 8 x 1:1 20-VQFN (3.5x4.5)
1 ul
Single Supply
20-VFQFN Exposed Pad
20-VQFN (3.5x4.5)
-40 °C
85 °C
Bus Switch
3.5999999046325684 V
2.299999952316284 V
8 ul
1:1
Surface Mount
Texas Instruments
SN74CB3Q3245PWRE4
Bus Switch 8 x 1:1 20-TSSOP
1 ul
Single Supply
20-TSSOP
20-TSSOP
-40 °C
85 °C
Bus Switch
3.5999999046325684 V
2.299999952316284 V
8 ul
1:1
Surface Mount
0.004394200164824724 m
0.004399999976158142 m
Texas Instruments
SN74CB3Q3245RGYR
Bus Switch 8 x 1:1 20-VQFN (3.5x4.5)
1 ul
Single Supply
20-VFQFN Exposed Pad
20-VQFN (3.5x4.5)
-40 °C
85 °C
Bus Switch
3.5999999046325684 V
2.299999952316284 V
8 ul
1:1
Surface Mount
Texas Instruments
SN74CB3Q3245DBQR
Bus Switch 8 x 1:1 20-SSOP
1 ul
Single Supply
20-SSOP
20-SSOP
-40 °C
85 °C
Bus Switch
3.5999999046325684 V
2.299999952316284 V
8 ul
1:1
Surface Mount
0.003911599982529879 m
0.003899999894201755 m
Texas Instruments
SN74CB3Q3245ZQNR
Bus Switch 8 x 1:1 20-BGA MICROSTAR JUNIOR (4x3)
1 ul
Single Supply
20-VFBGA
20-BGA MICROSTAR JUNIOR (4x3)
-40 °C
85 °C
Bus Switch
3.5999999046325684 V
2.299999952316284 V
8 ul
1:1
Surface Mount
Texas Instruments
SN74CB3Q3245DGVR
Bus Switch 8 x 1:1 20-TVSOP
1 ul
Single Supply
20-TFSOP
20-TVSOP
-40 °C
85 °C
Bus Switch
3.5999999046325684 V
2.299999952316284 V
8 ul
1:1
Surface Mount
0.004394200164824724 m
0.004399999976158142 m
Texas Instruments
SN74CB3Q3245GQNR
Bus Switch 8 x 1:1 20-BGA MICROSTAR JUNIOR (4x3)
1 ul
Single Supply
20-VFBGA
20-BGA MICROSTAR JUNIOR (4x3)
-40 °C
85 °C
Bus Switch
3.5999999046325684 V
2.299999952316284 V
8 ul
1:1
Surface Mount

Key Features

High-Bandwidth Data Path (Up to 500 MHz)Equivalent to IDTQS3VH384 Device5-V Tolerant I/Os with Device Powered-Up or Powered-DownLow and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron= 4Typical)Rail-to-Rail Switching on Data I/O Ports0- to 5-V Switching With 3.3-V VCC0- to 3.3-V Switching With 2.5-V VCCBidirectional Data Flow, With Near-Zero Propagation DelayLow Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF)= 3.5 pF Typical)Fast Switching Frequency (fOE\= 20 MHz Max)Data and Control Inputs Provide Undershoot Clamp DiodesLow Power Consumption (ICC= 1 mA Typical)VCCOperating Range From 2.3 V to 3.6 VData I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS OutputsIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal GatingFor additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report,CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.High-Bandwidth Data Path (Up to 500 MHz)Equivalent to IDTQS3VH384 Device5-V Tolerant I/Os with Device Powered-Up or Powered-DownLow and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron= 4Typical)Rail-to-Rail Switching on Data I/O Ports0- to 5-V Switching With 3.3-V VCC0- to 3.3-V Switching With 2.5-V VCCBidirectional Data Flow, With Near-Zero Propagation DelayLow Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF)= 3.5 pF Typical)Fast Switching Frequency (fOE\= 20 MHz Max)Data and Control Inputs Provide Undershoot Clamp DiodesLow Power Consumption (ICC= 1 mA Typical)VCCOperating Range From 2.3 V to 3.6 VData I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS OutputsIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal GatingFor additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report,CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

Description

AI
The SN74CB3Q3245 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3245 is organized as an 8-bit bus switch with a single output-enable (OE\) input. When OE\ is low, the bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the bus switch is OFF and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CB3Q3245 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3245 is organized as an 8-bit bus switch with a single output-enable (OE\) input. When OE\ is low, the bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the bus switch is OFF and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.