CSD17581 Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm

Part	Vgs(th) (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Package Width	Package Name	Package Length	Vgs (Max)	Technology	Rds On (Max)	Package / Case	Power Dissipation (Max)	Operating Temperature (Max)	Operating Temperature (Min)	Mounting Type	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Max)
Texas Instruments CSD17581Q5A	1.7 V	N-Channel	123 A	24 A	6 mm	8-VSONP	5 mm	20 V	MOSFET (Metal Oxide)	3.4 mOhm	8-PowerTDFN	3.1 W 83 W	155 °C	-55 °C	Surface Mount	3640 pF	10 V	4.5 V	30 V	54 nC
Texas Instruments CSD17581Q5AT	1.7 V	N-Channel	123 A	24 A	6 mm	8-VSONP	5 mm	20 V	MOSFET (Metal Oxide)	3.4 mOhm	8-PowerTDFN	3.1 W 83 W	150 °C	-55 °C	Surface Mount	3640 pF	10 V	4.5 V	30 V	54 nC
Texas Instruments CSD17581Q3AT	1.7 V	N-Channel	60 A		3.3 mm	8-VSONP	3 mm	20 V	MOSFET (Metal Oxide)	3.8 mOhm	8-PowerVDFN	2.8 W 63 W	150 °C	-55 °C	Surface Mount	3640 pF	10 V	4.5 V	30 V	54 nC

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm

Description

This 30-V, 2.9-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 30-V, 2.9-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.