DRV8305-Q1 Series
Automotive 12-V battery 3-phase smart gate driver (grade 0 & grade 1)
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
Automotive 12-V battery 3-phase smart gate driver (grade 0 & grade 1)
| Part | Output Configuration | Mounting Type | Interface | Supplier Device Package | Voltage - Supply [Min] | Voltage - Supply [Max] | Function | Applications | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Technology | Grade | Motor Type - Stepper | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments DRV83055QPHPRQ1 | Pre-Driver - Half Bridge (3) | Surface Mount | PWM, SPI | 48-HTQFP (7x7) | 4.4 V | 45 V | Controller - Commutation, Direction Management | PMSM Motors, Three-Phase BLDC | -40 °C | 125 °C | 48-PowerTQFP | Power MOSFET | Automotive | Multiphase | AEC-Q100 |
Texas Instruments DRV8305NEPHPRQ1 | Pre-Driver - Half Bridge (3) | Surface Mount | PWM, SPI | 48-HTQFP (7x7) | 4.4 V | 45 V | Controller - Commutation, Direction Management | PMSM Motors, Three-Phase BLDC | -40 °C | 125 °C | 48-PowerTQFP | Power MOSFET | Automotive | Multiphase | AEC-Q100 |
Texas Instruments DRV8305NQPHPRQ1 | Pre-Driver - Half Bridge (3) | Surface Mount | PWM, SPI | 48-HTQFP (7x7) | 4.4 V | 45 V | Controller - Commutation, Direction Management | PMSM Motors, Three-Phase BLDC | -40 °C | 125 °C | 48-PowerTQFP | Power MOSFET | Automotive | Multiphase | AEC-Q100 |
Texas Instruments DRV83055QPHPQ1 | Pre-Driver - Half Bridge (3) | Surface Mount | PWM, SPI | 48-HTQFP (7x7) | 4.4 V | 45 V | Controller - Commutation, Direction Management | PMSM Motors, Three-Phase BLDC | -40 °C | 125 °C | 48-PowerTQFP | Power MOSFET | Automotive | Multiphase | AEC-Q100 |
Texas Instruments DRV8305NQPHPQ1 | Pre-Driver - Half Bridge (3) | Surface Mount | PWM, SPI | 48-HTQFP (7x7) | 4.4 V | 45 V | Controller - Commutation, Direction Management | PMSM Motors, Three-Phase BLDC | -40 °C | 125 °C | 48-PowerTQFP | Power MOSFET | Automotive | Multiphase | AEC-Q100 |
Texas Instruments DRV83053QPHPRQ1 | Pre-Driver - Half Bridge (3) | Surface Mount | PWM, SPI | 48-HTQFP (7x7) | 4.4 V | 45 V | Controller - Commutation, Direction Management | PMSM Motors, Three-Phase BLDC | -40 °C | 125 °C | 48-PowerTQFP | Power MOSFET | Automotive | Multiphase | AEC-Q100 |
Texas Instruments DRV8305NEPHPQ1 | Pre-Driver - Half Bridge (3) | Surface Mount | PWM, SPI | 48-HTQFP (7x7) | 4.4 V | 45 V | Controller - Commutation, Direction Management | PMSM Motors, Three-Phase BLDC | -40 °C | 125 °C | 48-PowerTQFP | Power MOSFET | Automotive | Multiphase | AEC-Q100 |
Key Features
• AEC-Q100 qualified for automotive applicationsAmbient operating temperature ranges:Temperature grade 0 (E): –40°C to +150°CTemperature grade 1 (Q): –40°C to +125°C4.4-V to 45-V operating voltage1.25-A and 1-A Peak gate drive currentsSmart gate drive architecture (IDRIVE & TDRIVE)Programmable high- and low-side slew-rate controlCharge-pump gate driver for 100% duty cycleThree integrated current-shunt amplifiersIntegrated 50-mA LDO (3.3-V and 5-V option)3-PWM or 6-PWM input control up to 200 kHzSingle PWM-mode commutation capabilitySerial Peripheral Interface (SPI) for device settings and fault reportingThermally-enhanced 48-Pin HTQFPProtection features:Fault diagnostics and MCU watchdogProgrammable dead-time controlMOSFET shoot-through preventionMOSFET VDSovercurrent monitorsGate-driver fault detectionReverse battery-protection supportLimp home-mode supportOvertemperature warning and shutdownAEC-Q100 qualified for automotive applicationsAmbient operating temperature ranges:Temperature grade 0 (E): –40°C to +150°CTemperature grade 1 (Q): –40°C to +125°C4.4-V to 45-V operating voltage1.25-A and 1-A Peak gate drive currentsSmart gate drive architecture (IDRIVE & TDRIVE)Programmable high- and low-side slew-rate controlCharge-pump gate driver for 100% duty cycleThree integrated current-shunt amplifiersIntegrated 50-mA LDO (3.3-V and 5-V option)3-PWM or 6-PWM input control up to 200 kHzSingle PWM-mode commutation capabilitySerial Peripheral Interface (SPI) for device settings and fault reportingThermally-enhanced 48-Pin HTQFPProtection features:Fault diagnostics and MCU watchdogProgrammable dead-time controlMOSFET shoot-through preventionMOSFET VDSovercurrent monitorsGate-driver fault detectionReverse battery-protection supportLimp home-mode supportOvertemperature warning and shutdown
Description
AI
The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.
The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.
The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.
The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDSof both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control.
Device Options:
The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.
The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.
The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.
The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDSof both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control.
Device Options: