DMTH4007LPSW Series

40V 175°C N-Channel Enhancement Mode MOSFET

Catalog

40V 175°C N-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Technology	FET Type	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Package / Case
Diodes Inc DMTH4007LPSW-13	10 V	4.5 V	PowerDI5060-8 (Type UX)	-55 °C	175 °C	6.5 mOhm	40 V	2.7 W 83.3 W	20 V	Surface Mount Wettable Flank	85 A	15 A	MOSFET (Metal Oxide)	N-Channel	3 V	1895 pF	29.1 nC	8-PowerTDFN

40V 175°C N-Channel Enhancement Mode MOSFET

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Thermally Efficient Package – Cooler Running Applications

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

• <1.1mm Package Profile – Ideal for Thin Applications

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An automotive-compliant part is available under separate datasheet (DMTH4007LPSWQ)

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance.