DMTH4007LPSW-13
ActiveDiodes Inc
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
DMTH4007LPSW-13
ActiveDiodes Inc
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMTH4007LPSW Series
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH4007LPSW-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15 A |
| Current - Continuous Drain (Id) (Tc) | 85 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 29.1 nC |
| Input Capacitance (Ciss) (Max) | 1895 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PowerDI5060-8 (Type UX) |
| Power Dissipation (Max) | 2.7 W, 83.3 W |
| Rds On (Max) | 6.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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