MTB50P03HDL Series

Power MOSFET -30V -50A 25 mOhm Single P-Channel D2PAK Logic Level

Catalog

Power MOSFET -30V -50A 25 mOhm Single P-Channel D2PAK Logic Level

Part	Technology	FET Type	Vgs(th) (Max)	Mounting Type	Gate Charge (Max)	Package Name	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)
ON Semiconductor MTB50P03HDLT4G	MOSFET (Metal Oxide)	P-Channel	2 V	Surface Mount	100 nC 100 nC	D2PAK	25 mOhm	5 V	-55 °C	150 °C	50 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	15 V	2.5 W 125 W	4900 pF	30 V

Catalog

Power MOSFET -30V -50A 25 mOhm Single P-Channel D2PAK Logic Level

Key Features

• Avalanche Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSSand VDS(on)Specified at Elevated Temperature

• Short Heatsink Tab Manufactured Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• Pb-Free Packages are Available

Description

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.