MTB50P03HDLT4G
ObsoletePOWER MOSFET -30V -50A 25 MOHM SINGLE P-CHANNEL D2PAK LOGIC LEVEL
MTB50P03HDLT4G
ObsoletePOWER MOSFET -30V -50A 25 MOHM SINGLE P-CHANNEL D2PAK LOGIC LEVEL
Description
General part information
MTB50P03HDL Series
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Technical Specifications
Parameters and characteristics for this part
| Specification | MTB50P03HDLT4G |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 50 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 100 nC, 100 nC |
| Input Capacitance (Ciss) (Max) | 4900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | D2PAK |
| Power Dissipation (Max) | 125 W, 2.5 W |
| Rds On (Max) | 25 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 15 V |
| Vgs(th) (Max) | 2 V |
Pricing
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