MOSFET N-CH 100V 131A TO263
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM70060E-GE3 | TO-263 (D2PAK) | 100 V | 375 W | 5.6 mOhm | Surface Mount | 131 A | 20 V | -55 °C | 175 ░C | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 10 V | 7.5 V | 81 nC | 4 V | N-Channel | MOSFET (Metal Oxide) |