SUM70060E-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 131A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 131A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM70060E-GE3

Current - Continuous Drain (Id) @ 25°C	131 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs [Max]	5.6 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Technology
Vishay General Semiconductor - Diodes Division SUM70060E-GE3	TO-263 (D2PAK)	100 V	375 W	5.6 mOhm	Surface Mount	131 A	20 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	7.5 V	81 nC	4 V	N-Channel	MOSFET (Metal Oxide)

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General part information

N-Channel 100 V 131A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources