MOSFET N-CH 100V 131A TO263
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Type | Technology | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | TO-263 (D2PAK)  | 100 V  | 375 W  | 5.6 mOhm  | Surface Mount  | 131 A  | 20 V  | -55 °C  | 175 ░C  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | 10 V  | 7.5 V  | 81 nC  | 4 V  | N-Channel  | MOSFET (Metal Oxide)  |