CSD16322 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	FET Type	Gate Charge (Max)	Package Name	Package Width	Package Length	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Technology	Vgs (Max) Negative	Vgs (Max) Positive	Power Dissipation (Max)	Vgs(th) (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)
Texas Instruments CSD16322Q5	3 V	8 V	N-Channel	9.7 nC	8-VSON-CLIP	6 mm	5 mm	1365 pF	21 A	97 A	Surface Mount	25 V	5 mOhm	MOSFET (Metal Oxide)	-8 V	10 V	3.1 W	1.4 V	8-PowerTDFN	-55 °C	150 °C

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.