IR MOSFET™ N-CHANNEL ; IPAK TO-251 PACKAGE; 13.9 MOHM;
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Through Hole | 3031 pF | 143 W | 56 A | 20 V | 13.9 mOhm | 4 V | 81 nC | MOSFET (Metal Oxide) | 10 V | IPAK TO-251-3 Short Leads TO-251AA | 100 V | -55 °C | 175 ░C | IPAK (TO-251AA) | N-Channel |