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IRFU4510PBF - IPAK (TO-251)

IRFU4510PBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; IPAK TO-251 PACKAGE; 13.9 MOHM;

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IRFU4510PBF - IPAK (TO-251)

IRFU4510PBF

Active
Infineon Technologies

IR MOSFET™ N-CHANNEL ; IPAK TO-251 PACKAGE; 13.9 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFU4510PBF
Current - Continuous Drain (Id) @ 25°C56 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs81 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3031 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)143 W
Rds On (Max) @ Id, Vgs13.9 mOhm
Supplier Device PackageIPAK (TO-251AA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.48
10$ 1.60
100$ 1.09
500$ 0.88
1000$ 0.81
2000$ 0.75
5000$ 0.73
NewarkEach 1$ 0.94

Description

General part information

IRFU4510 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.