LMG3616 Series

650-V 270-mΩ GaN FET with integrated driver and protection

Catalog

650-V 270-mΩ GaN FET with integrated driver and protection

Part	Rds On (Typ)	Output Ratio	Input Ratio	Number of Outputs	Voltage - Supply (Vcc/Vdd) Minimum	Voltage - Supply (Vcc/Vdd) Maximum	Switch Type	Interface	Package / Case	Package Name	Package Width	Package Length	Fault Protection	Output Configuration	Current - Output (Max)	Output Type	Mounting Type	Operating Temperature (Max)	Operating Temperature (Min)	Features
Texas Instruments LMG3616REQR	270 mOhm	1	1	1	10 V	26 V	General Purpose	Logic	38-VFQFN Exposed Pad	38-VQFN	5.3 mm	8 mm	UVLO	Low Side	5 A	N-Channel	Surface Mount	125 °C	-40 °C	Slew Rate Controlled

Catalog

650-V 270-mΩ GaN FET with integrated driver and protection

Description

The LMG3616 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3616 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package. Programmable turn-on slew rates provide EMI and ringing control. The LMG3616 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin. The LMG3616 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3616 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package. Programmable turn-on slew rates provide EMI and ringing control. The LMG3616 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.