CSD19535 Series

100-V, N channel NexFET™ power MOSFET, single TO-220, 3.6 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single TO-220, 3.6 mOhm

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Package Name	Technology	FET Type	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package / Case	Rds On (Max)	Mounting Type
Texas Instruments CSD19535KCS	20 V	100 V	300 W	-55 °C	175 °C	101 nC 101 nC	TO-220-3	MOSFET (Metal Oxide)	N-Channel	150 A	7930 pF	3.4 V	6 V	10 V	TO-220-3	3.6 mOhm	Through Hole

Catalog

100-V, N channel NexFET™ power MOSFET, single TO-220, 3.6 mOhm

Description

This 100V, 3.1mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 100V, 3.1mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.