DIODE SIL CARB 1.2KV 20A TO247-2
| Part | Speed | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Technology | Reverse Recovery Time (trr) | Supplier Device Package | Current - Reverse Leakage @ Vr | Mounting Type | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ GP3D020A120B | No Recovery Time | 1.65 V | 1.2 kV | 1179 pF | SiC (Silicon Carbide) Schottky | 0 ns | TO-247-2 | 40 µA | Through Hole | TO-247-2 | 175 ░C | -55 C | |||
SemiQ GP3D020A120U | No Recovery Time | 1.65 V | 1.2 kV | SiC (Silicon Carbide) Schottky | 0 ns | TO-247-3 | 20 µA | Through Hole | TO-247-3 | 175 ░C | -55 C | 10 A | 1 Pair Common Cathode | ||
SemiQ GP3D020A170B | No Recovery Time | 1.65 V | 1700 V | 1403 pF | SiC (Silicon Carbide) Schottky | 0 ns | TO-247-2 | 80 µA | Through Hole | TO-247-2 | 175 ░C | -55 C | 67 A |