
CSD22202 Series
Manufacturer: Texas Instruments
-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 12.2 MOHM, GATE ESD PROTECTION
| Part | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Package Name | Vgs (Max) | Vgs(th) (Max) | Mounting Type | Technology | FET Type | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) (Ta) | Rds On (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | 8 V | -55 °C | 150 °C | 8.4 nC | 9-DSBGA | -6 V | 1.1 V | Surface Mount | MOSFET (Metal Oxide) | P-Channel | 2.5 V | 4.5 V | 1390 pF | 1.5 W | 10 A | 12.2 mOhm | 9-UFBGA DSBGA |