CSD16401 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Link to Manufacturer Page: https://www.ti.com/

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)
Texas Instruments CSD16401Q5	29 nC	8-PowerTDFN	1.6 mOhm	1.9 V	N-Channel	16 V	-12 V	4.5 V, 10 V	38 A, 100 A	150 °C	-55 °C	MOSFET (Metal Oxide)	3.1 W	Surface Mount	8-VSON-CLIP (5x6)	4100 pF	25 V
Texas Instruments CSD16401Q5T	29 nC	8-PowerTDFN	1.6 mOhm	1.9 V	N-Channel	16 V	-12 V	4.5 V, 10 V	100 A	150 °C	-55 °C	MOSFET (Metal Oxide)	3.1 W	Surface Mount	8-VSON-CLIP (5x6)	4100 pF	25 V

Key Features

• Ultra-Low Q g and Q gdLow Thermal ResistanceAvalanche RatedSON 5-mm × 6-mm Plastic PackageUltra-Low Q g and Q gdLow Thermal ResistanceAvalanche RatedSON 5-mm × 6-mm Plastic Package

Description

This 25-V, 1.3-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 25-V, 1.3-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.