MOSFET N-CH 100V 60A TO263
| Part | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs (Max) | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM60N10-17-E3 | Surface Mount | 100 nC | 4300 pF | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 6 V, 10 V | 60 A | 100 V | -55 °C | 175 ░C | 4 V | MOSFET (Metal Oxide) | 3.75 W, 150 W | 16.5 mOhm | 20 V | N-Channel | TO-263 (D2PAK) | |
Vishay Siliconix SUM60N02-3M9P-E3 | Surface Mount | 5950 pF | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 4.5 V, 10 V | 60 A | 20 V | -55 °C | 175 ░C | 3 V | MOSFET (Metal Oxide) | 3.75 W, 120 W | 20 V | N-Channel | TO-263 (D2PAK) | 50 nC |