SUM60N10-17-E3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 60A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 60A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM60N10-17-E3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	4300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.75 W, 150 W
Rds On (Max) @ Id, Vgs	16.5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SUM60N10-17-E3	Surface Mount	100 nC	4300 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6 V 10 V	60 A	100 V	-55 °C	175 ░C	4 V	MOSFET (Metal Oxide)	3.75 W 150 W	16.5 mOhm	20 V	N-Channel	TO-263 (D2PAK)
Vishay General Semiconductor - Diodes Division SUM60N02-3M9P-E3	Surface Mount		5950 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	60 A	20 V	-55 °C	175 ░C	3 V	MOSFET (Metal Oxide)	3.75 W 120 W		20 V	N-Channel	TO-263 (D2PAK)	50 nC

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General part information

N-Channel 100 V 60A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources