MOSFET N-CH 100V 60A TO263
| Part | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs (Max) | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | Surface Mount  | 100 nC  | 4300 pF  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | 6 V  10 V  | 60 A  | 100 V  | -55 °C  | 175 ░C  | 4 V  | MOSFET (Metal Oxide)  | 3.75 W  150 W  | 16.5 mOhm  | 20 V  | N-Channel  | TO-263 (D2PAK)  | |
Vishay General Semiconductor - Diodes Division  | Surface Mount  | 5950 pF  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | 4.5 V  10 V  | 60 A  | 20 V  | -55 °C  | 175 ░C  | 3 V  | MOSFET (Metal Oxide)  | 3.75 W  120 W  | 20 V  | N-Channel  | TO-263 (D2PAK)  | 50 nC  |