MOSFET N-CH 40V 20A 8TSON
| Part | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Supplier Device Package [y] | Supplier Device Package | Supplier Device Package [x] | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage XPN7R104NC,L1XHQ | 7.1 mOhm | 1290 pF | N-Channel | 3.1 | 8-TSON Advance-WF | 3.1 | 175 °C | 4.5 V, 10 V | 8-PowerVDFN | 20 A | MOSFET (Metal Oxide) | 2.5 V | 40 V | 65 W, 840 mW | 20 V | 21 nC | Surface Mount |