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XPN7R104NC,L1XHQ - TK200F04N1L,LXGQ

XPN7R104NC,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A 8TSON

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XPN7R104NC,L1XHQ - TK200F04N1L,LXGQ

XPN7R104NC,L1XHQ

Active
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A 8TSON

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationXPN7R104NC,L1XHQ
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]21 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1290 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)840 mW, 65 W
Rds On (Max) @ Id, Vgs7.1 mOhm
Supplier Device Package8-TSON Advance-WF
Supplier Device Package [x]3.1
Supplier Device Package [y]3.1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.75
10$ 1.11
100$ 0.75
500$ 0.59
1000$ 0.54
2000$ 0.50
Digi-Reel® 1$ 1.75
10$ 1.11
100$ 0.75
500$ 0.59
1000$ 0.54
2000$ 0.50
Tape & Reel (TR) 5000$ 0.45
10000$ 0.45

Description

General part information

XPN7R104NC,L1XHQ

N-Channel 40 V 20A (Ta) 840mW (Ta), 65W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)

Documents

Technical documentation and resources