MOSFET P-CH 40V 40A 8TSON
| Part | Power Dissipation (Max) | Mounting Type | Supplier Device Package [y] | Supplier Device Package | Supplier Device Package [x] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature | Vgs (Max) [Min] | Vgs (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Grade | Technology | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage XPN9R614MC,L1XHQ | 100 W, 840 mW | Surface Mount | 3.1 | 8-TSON Advance-WF | 3.1 | 40 A | 2.1 V | 3000 pF | 64 nC | P-Channel | 9.6 mOhm | 40 V | 8-PowerVDFN | 175 °C | -20 V | 10 V | 4.5 V, 10 V | Automotive | MOSFET (Metal Oxide) | AEC-Q101 |