XPN9R614MC,L1XHQ
ActiveToshiba Semiconductor and Storage
MOSFET P-CH 40V 40A 8TSON
Deep-Dive with AI
Search across all available documentation for this part.
XPN9R614MC,L1XHQ
ActiveToshiba Semiconductor and Storage
MOSFET P-CH 40V 40A 8TSON
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | XPN9R614MC,L1XHQ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 64 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 840 mW, 100 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 9.6 mOhm |
| Supplier Device Package | 8-TSON Advance-WF |
| Supplier Device Package [x] | 3.1 |
| Supplier Device Package [y] | 3.1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 10 V |
| Vgs (Max) [Min] | -20 V |
| Vgs(th) (Max) @ Id | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.81 | |
| 10 | $ 1.16 | |||
| 100 | $ 0.78 | |||
| 500 | $ 0.62 | |||
| 1000 | $ 0.56 | |||
| 2000 | $ 0.52 | |||
| Digi-Reel® | 1 | $ 1.81 | ||
| 10 | $ 1.16 | |||
| 100 | $ 0.78 | |||
| 500 | $ 0.62 | |||
| 1000 | $ 0.56 | |||
| 2000 | $ 0.52 | |||
| Tape & Reel (TR) | 5000 | $ 0.43 | ||
| 10000 | $ 0.42 | |||
Description
General part information
XPN9R614MC,L1XHQ
P-Channel 40 V 40A (Ta) 840mW (Ta), 100W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)
Documents
Technical documentation and resources
No documents available