DMN601LTQ Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Qualification	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Grade	Power Dissipation (Max)	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)
Diodes Inc DMN601LTQ-7	2.5 V	SOT-523	Surface Mount	60 V	AEC-Q101	1.3 nC	47 pF	356 mA	-55 °C	150 °C	MOSFET (Metal Oxide)	Automotive	400 mW	N-Channel	SOT-523	10 V	5 V	2 Ohm	20 V
Diodes Inc DMN601LTQ-13	2.5 V	SOT-523	Surface Mount	60 V	AEC-Q101	1.3 nC	47 pF	356 mA	-55 °C	150 °C	MOSFET (Metal Oxide)	Automotive	400 mW	N-Channel	SOT-523	10 V	5 V	2 Ohm	20 V

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance: RDS(ON)

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMN601LTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in motor controls and power-management functions.