DMN601LTQ-13
ActiveDiodes Inc
60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN601LTQ-13
ActiveDiodes Inc
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN601LTQ-13
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in motor controls and power-management functions.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN601LTQ-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 356 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 1.3 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 47 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-523 |
| Package Name | SOT-523 |
| Power Dissipation (Max) | 400 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources