CSD18536 Series

60-V, N channel NexFET™ power MOSFET, single D2PAK, 1.6 mOhm

Catalog

60-V, N channel NexFET™ power MOSFET, single D2PAK, 1.6 mOhm

Part	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Mounting Type	Gate Charge (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Technology	Package Name	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)
Texas Instruments CSD18536KTT	11430 pF	375 W	2.2 V	Surface Mount	140 nC	1.6 mOhm	60 V	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	20 V	200 A	MOSFET (Metal Oxide)	TO-263 (DDPAK-3)	N-Channel	-55 °C	175 °C	10 V	4.5 V
Texas Instruments CSD18536KCS	11430 pF	375 W	2.2 V	Through Hole	108 nC	1.6 mOhm	60 V	TO-220-3	20 V	200 A	MOSFET (Metal Oxide)	TO-220-3	N-Channel	-55 °C	175 °C	10 V	4.5 V
Texas Instruments CSD18536KTTT	11430 pF	375 W	2.2 V	Surface Mount	140 nC	1.6 mOhm	60 V	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	20 V	200 A	MOSFET (Metal Oxide)	TO-263 (DDPAK-3)	N-Channel	-55 °C	175 °C	10 V	4.5 V	349 A

Catalog

60-V, N channel NexFET™ power MOSFET, single D2PAK, 1.6 mOhm

Description

This 60V, 1.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 60V, 1.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.